格言MAX77838 PMIC 90 nm BCD Process Review - Process Review Report

This report presents a Process Review of the Maxim PB38C-0 die. This report contains the following detailed information:

Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs

Scanning electron microscopy (SEM) cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors

Measurements of vertical and horizontal dimensions of major microstructural features

Plan-view optical micrograph of the die delayered to polysilicon

Transmission electron microscopy (TEM) cross-sectional micrographs of the logic MOS and LDMOS transistors, selected metal/dielectric stack features, and interlevel MIM capacitors

Scanning microwave impedance microscopy (sMIM) images of wells

Secondary ion mass spectrometry (SIMS) doping profile analysis of wells and silicon substrate

Spreading Resistance Profiling (SRP) of the silicon substrate

Planar SEM images of selected circuit elements at polysilicon